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A flash memory sector can be programmed many times
between erases, as long as each byte (word) within the
sector is only programmed once. For example, an SST
flash device with a 4 KByte sector can have all 4 KByte programmed
byte-by-byte in one Program operation time or
can have each byte programmed with its own Program
operation until all 4,096 locations have been programmed.
Each Erase operation plus the Program operations (1 to
4096 times of Byte-Program) after the erase, makes one
endurance (Erase and Program) cycle.
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